Semiconductor structure, method for manufacturing semiconductor structure and semiconductor package

ABSTRACT

A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.

This application claims the benefit of Taiwan application Serial No.97124100, filed Jun. 27, 2008, the subject matter of which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates in general to a semiconductor structure, a methodfor manufacturing a semiconductor structure and a semiconductor packageand more particularly to a semiconductor structure using through siliconvia technology, a method for manufacturing a semiconductor structure anda semiconductor package.

2. Description of the Related Art

As electronic products are directed towards slimness, light weight andcompactness, the semiconductor structure using through silicon via (TSV)technology has become a mainstream trend. Referring to FIGS. 1A˜1G,perspectives of a method for manufacturing a semiconductor structure 900using through silicon via technology are shown. The manufacturing methodincludes the following steps. Firstly, referring to FIG. 1A, a siliconwafer 910 having a first surface 910 a and a second surface 910 b isprovided. Next, referring to FIG. 1B, an indent 910 c is formed on thefirst surface 910 a by dry etching. Then, referring to FIG. 1C, aninsulating layer 920 made from silicon nitride material for example isformed by chemical vapor deposition (CVD) technology to cover the firstsurface 910 a and the inner wall of the indent 910 c. After that,referring to FIG. 1D, a copper material 940 is electroplated in theindent 910 c. Then, referring to FIG. 1E, a conductive pad 950 is formedon the first surface 910 a and covers the indent 910 c. Afterwards,referring to FIG. 1F, the second surface 910 b is polished until thecopper material 940 filled in the indent 910 c is exposed. Lastly,referring to FIG. 1G, another conductive pad 960 is formed on the secondsurface 910 b and covers the indent 910 c. Thus, a semiconductorstructure 900 is formed.

The first surface 910 a and the second surface 910 b of the siliconwafer 910 can be contacted with each other through the conductive pad950, the copper material 940 and the conductive pad 960. The coppermaterial 940 and the first surface 910 a are both protected by theinsulating layer 920.

However, according to the conventional method for manufacturing thesemiconductor structure 900, the insulating layer 920 is formed by CVDtechnology. As the CVD technology equipment is expensive, moremanufacturing costs are incurred.

Furthermore, according to the conventional method for manufacturing thesemiconductor structure 900, the copper material 940 is exposed by wayof polishing the second surface 910 b, not only incurring moremanufacturing process and more time, but also easily damaging thesilicon wafer 910. Thus, there are many bottleneck technologies in thethrough silicon via technology of the silicon wafer 910 that need to beresolved.

SUMMARY OF THE INVENTION

The invention is directed to a semiconductor structure and a method formanufacturing a semiconductor structure and a semiconductor package. Asthe photosensitive material is used as an insulating layer, the methodfor manufacturing the semiconductor structure does not require the CVDprocess nor require the step of grinding the silicon substrate, hencelargely reducing manufacturing cost and increasing product yield rate.

According to a first aspect of the present invention, a method formanufacturing a semiconductor structure is provided. The manufacturingmethod includes the following steps. Firstly, a silicon substrate isprovided. Next, a part of the silicon substrate is removed to form aring hole and a silicon pillar surrounded by the ring hole. Then, aphotosensitive material is disposed in the ring hole, wherein thephotosensitive material is insulating. After that, the silicon pillar isremoved, such that the ring hole forms a through hole and thephotosensitive material covers a lateral wall of the through hole.Lastly, a conductive material is disposed in the through hole, whereinan outer surface of the conductive material is surrounded by thephotosensitive material.

According to a second aspect of the present invention, a semiconductorstructure including a silicon substrate, a photosensitive material and aconductive material is provided. The silicon substrate has a throughhole. The photosensitive material covers a lateral wall of the throughhole, wherein the photosensitive material is insulating. The conductivematerial is disposed in the through hole, wherein an outer surface ofthe conductive material is surrounded by the photosensitive material.

According to a third aspect of the present invention, a semiconductorpackage is provided. The semiconductor package comprises a packagesubstrate, a silicon interposer and a chip. The silicon interposer isdisposed above the package substrate and comprises a silicon substrate,a photosensitive material and a conductive material. The siliconsubstrate has a through hole. The photosensitive material covers alateral wall of the through hole. The photosensitive material isinsulating. The conductive material is disposed in the through hole andan outer surface of the conductive material is surrounded by thephotosensitive material. The chip is disposed above the siliconinterposer.

The invention will become apparent from the following detaileddescription of the preferred but non-limiting embodiments. The followingdescription is made with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A˜1G (Prior Art) are perspectives of a method for manufacturing asemiconductor structure using through silicon via technology;

FIG. 2 shows a flowchart of a method for manufacturing a semiconductorstructure according to the invention;

FIGS. 3A˜3K are perspectives of a method for manufacturing asemiconductor structure according to a preferred embodiment of theinvention;

FIG. 4 shows another flowchart of a method for manufacturing asemiconductor structure according to the invention;

FIGS. 5A˜5K are other perspectives of a method for manufacturing asemiconductor structure according to a preferred embodiment of theinvention;

FIGS. 6A˜6K are yet other perspectives of a method for manufacturing asemiconductor structure according to a preferred embodiment of theinvention;

FIG. 7A˜7O are further perspectives of a method for manufacturing asemiconductor structure according to a preferred embodiment of theinvention;

FIG. 8 shows a perspective of a second surface of a silicon substrate ofFIG. 7C;

FIG. 9 shows a perspective of a second surface of a silicon substrate ofFIG. 7I;

FIGS. 10A˜10C are further perspectives of a method for manufacturing asemiconductor structure according to a preferred embodiment of theinvention; and

FIG. 11 shows a semiconductor package.

DETAILED DESCRIPTION OF THE INVENTION

The invention is elaborated in preferred embodiments disclosed below.These embodiments are for exemplification purpose not for limiting thescope of protection of the invention. Also, secondary elements areomitted in the preferred embodiments below for highlighting thetechnical features of the invention.

Referring to FIG. 2 and at the same time comparing FIG. 2 to FIGS.3A˜3K. Firstly, the method begins at step S101 as indicated in FIG. 3A,a silicon substrate 110 is provided. To be more precisely, a photoresistlayer 700 is disposed on the silicon substrate 110, wherein the siliconsubstrate 110 may be a silicon wafer having an internal circuit or adummy silicon wafer having no circuit and the photoresist layer 700 ispatterned.

Next, the method proceeds to step S102 as indicated in FIG. 3B, a partof the silicon substrate 110 is removed to form a ring hole 110 c and asilicon pillar 110 d, and as indicated in FIG. 3C, the photoresist layer700 (shown in FIG. 3B) is removed. To be more precisely, the patternedphotoresist layer 700 is used as a mask to etch the silicon substrate110 to form the ring hole 110 c and the silicon pillar 110 d, whereinthe ring hole 110 c surrounds the silicon pillar 110 d and the ring hole110 c may or may not pass through the silicon substrate 110. In thepresent embodiment of the invention, the ring hole 110 c does not passthrough the silicon substrate 110 but such exemplification is not forlimiting the invention.

Then, the method proceeds to step S103 as indicated in FIG. 3D, aphotosensitive material 130 is disposed in the ring hole 110 c, whereinthe photosensitive material 130 is insulating and the thickness of thephotosensitive material is 3-10 μm. As indicated in FIG. 3E, thephotosensitive material 130 is patterned such that the photosensitivematerial 130 has an opening 130 a corresponding to the silicon pillar110 d.

After that, the method proceeds to step S104 as indicated in FIG. 3F,the patterned photosensitive material 130 is used as a mask and thesilicon pillar 110 d (shown in FIG. 3E) is removed, such that the ringhole 110 c (shown in FIG. 3E) forms a through hole 110 e and thephotosensitive material 130 covers a lateral wall 110 h of the throughhole 110 e.

Lastly, the method proceeds to step S105 as indicated in FIGS. 3G˜3K, aconductive material 160 (shown in FIG. 3K) is disposed in the throughhole 110 e, wherein the conductive material 160 is surrounded by thephotosensitive material 130. Referring to FIG. 3G, a seed layer 131 isdisposed on the photosensitive material 130 and the bottom surface ofthe through hole 110 e. Next, referring to FIG. 3H, a photoresist layer132 having an opening 132 a is disposed on the seed layer 131. Afterthat, referring to FIG. 3I, the conductive material 160 is filled in thethrough hole 110 e. Wherein, the bottom part of the conductive material160 forms a conductive pillar 160 b, and the top part of the conductivematerial 160 forms a second conductive wiring 160 a. Wherein the secondconductive wiring 160 a can be used as a redistribution layer (RDL).Then, referring to FIG. 3J, the photoresist layer 132 (shown in FIG. 3I)is removed. Afterwards, referring to FIG. 3K, part of the seed layer 131is removed.

To be more precisely, the conductive material 160 may fill the entirethrough hole 110 e or only form a thin film on the photosensitivematerial 130. In the present embodiment of the invention, the conductivematerial 160 fills the entire through hole 110 e as an exemplification.

According to the above arrangement, there is no need to employ expensiveCVD equipment or polish the silicon substrate, hence greatly simplifyingmanufacturing process and avoiding the silicon substrate being damaged.Thus, the method for manufacturing a semiconductor structure accordingto the invention largely reduces manufacturing cost and increasesproduct yield rate.

Also, referring to FIG. 4, another flowchart of a method formanufacturing a semiconductor structure according to the invention isshown. The manufacturing method of FIG. 4 is a practical embodiment ofthe manufacturing method of FIG. 2.

Firstly, the method begins at step S201, a silicon substrate isprovided. Next, the method proceeds to step S202, a part of the siliconsubstrate is removed to form a ring hole and a silicon pillar surroundedby the ring hole. Then, the method proceeds to step S203, aphotosensitive material is disposed in the ring hole and thephotosensitive material covers the silicon substrate at the same time,wherein the photosensitive material is insulating. After that, themethod proceeds to step S204, the photosensitive material is patternedfor exposing the silicon pillar and ripening the photosensitivematerial. Afterwards, the method proceeds to step S205, the siliconpillar is removed such that the ring hole forms a through hole and thephotosensitive material covers a lateral wall of the through hole andthe silicon substrate to form a continuous surface. Lastly, the methodproceeds to step S206, a conductive material is disposed in the throughhole and the silicon substrate, and the conductive material ispatterned, wherein part of the conductive material in the through holeis surrounded by the photosensitive material, and part of the conductivematerial disposed on the silicon substrate is located on thephotosensitive material.

To further elaborate the flowchart of FIG. 2, FIGS. 5A˜5K are furtherdisclosed to elaborate the implementations. Firstly, referring to FIG.5A, a silicon substrate 210 is provided. To be more precisely, aphotoresist layer 702 is disposed on the silicon substrate 210, whereinthe silicon substrate 210 may be a silicon wafer having an internalcircuit or a dummy silicon wafer having no circuit and the photoresistlayer 702 is patterned.

Next, referring to FIG. 5B, a part of the silicon substrate 210 isremoved to form a ring hole 210 c and a silicon pillar 210 d, and asindicated in FIG. 5C, the photoresist layer 702 (shown in FIG. 5B) isremoved. To be more precisely, the patterned photoresist layer 702 isused as a mask to etch the silicon substrate 210 to form the ring hole210 c and the silicon pillar 210 d, wherein the ring hole 210 csurrounds the silicon pillar 210 d and the ring hole 210 c may or maynot pass through the silicon substrate 210. In the present embodiment ofthe invention, the ring hole 210 c does not pass through the siliconsubstrate 210 but such exemplification is not for limiting theinvention.

Then, referring to FIG. 5D, a photosensitive material 230 is disposed inthe ring hole 210 c, wherein the photosensitive material 230 isinsulating and the thickness of the photosensitive material is 3-10 μm.As indicated in FIG. 5E, the photosensitive material 230 is patternedsuch that the photosensitive material 230 has an opening 230 acorresponding to the silicon pillar 210 d.

After that, referring to FIG. 5F, the patterned photosensitive material230 is used as a mask and the silicon pillar 210 d (shown in FIG. 5E) isremoved, such that the ring hole 210 c (shown in FIG. 5E) forms athrough hole 210 e and the photosensitive material 230 covers a lateralwall 210 h of the through hole 210 e.

Next, referring to FIG. 5G, another patterned photoresist layer 600 isformed on the photosensitive material 230, wherein the patternedphotoresist layer 600 has an opening 600 a corresponding to the throughhole 210 e.

Next, as indicated in FIG. 5H, the patterned photoresist layer 600 isused as a mask, and a conductive material 260 is disposed in the throughhole 210 e through the opening 600 a, wherein the conductive material260 is surrounded by the photosensitive material 230. In the presentembodiment of the invention, the conductive material 260, which isexemplified as a thin film disposed on the photosensitive material 230,does not fill up the through hole 210 e.

Then, as indicated in FIG. 5I, the photoresist layer 600 (shown in FIG.5H) is removed.

After that, as indicated in FIG. 5J, a photosensitive material 500 isdisposed on the conductive material 260 and the photosensitive material230. The photosensitive material 500 and the photosensitive material 230are both insulating, but such exemplification is not for limiting theinvention.

Next, referring to FIG. 5K, the photosensitive material 500 is etched toform an opening 500 a. The opening 500 a exposes part of the conductivematerial 260. Wherein part of the conductive material 260 can be use asa redistribution layer (RDL).

Furthermore, another embodiment based on the concepts of FIG. 2 isprovided. Referring to FIG. 6A˜6K, yet other perspectives of a methodfor manufacturing a semiconductor structure according to a preferredembodiment of the invention are shown.

In FIG. 6A, a silicon substrate 310 has an internal wire 320 isprovided. Then, in FIG. 6B, the surface of the silicon substrate 310 isetched to form a ring hole 310 c and a silicon pillar 310 d. Wherein thering hole 310 c exposes the internal wire 320. Next, referring to FIGS.6C˜6F, the internal wire 320 is exposed after the silicon pillar 310 dis removed. Wherein a photosensitive material 330 covers a lateral wall310 h of the through hole 310 e.

Next, referring to FIGS. 6G˜6H, a conductive material 360 is disposed inthe through hole 310 e and on the photosensitive material 330 by takinga photoresist layer 603 as a mask.

Then, referring to FIGS. 6I˜6K, the photoresist layer 603 (shown in FIG.6H) is removed and a photosensitive material 503 having an opening 503 ais disposed on the conductive material 360, such that the conductivematerial 360 can be use as a redistribution layer (RDL).

Besides, another embodiment based on the concepts of FIG. 2 is alsoprovided. Referring to FIG. 7A˜7O, further perspectives of a method formanufacturing a semiconductor structure according to a preferredembodiment of the invention are shown.

In FIG. 7A, a silicon substrate 410 having a first surface 410 a and asecond surface 410 b is provided. The silicon substrate 410 is a siliconwafer for example.

In FIG. 7B, a first conductive wiring 420 is formed on the first surface410 a of the silicon substrate 410.

In FIG. 7C, a part of the silicon substrate 410 is removed to form aring hole 410 c and a silicon pillar 410 d. In the present embodiment,the silicon substrate 410 is etched from the second surface 410 b to thefirst surface 410 a and forms the ring hole 410 c. The ring hole 410 cpasses through the first surface 410 a of the silicon substrate 410, andthe first conductive wiring 420 is disposed at a pre-determined positionfor the ring hole 410 c, so that one end of the ring hole 410 c issealed by the first conductive wiring 420.

Referring to FIG. 8, a top view of a second surface 410 b of the siliconsubstrate 410 of FIG. 7C is shown. The silicon pillar 410 d is theremained structure after the ring hole 410 c is formed, wherein the ringhole 410 c surrounds the silicon pillar 410 d. The ring hole 410 c hasan inner lateral wall 410 f and an outer lateral wall 410 g, wherein theinner lateral wall 410 f is the outer surface of the silicon pillar 410d.

Next, as indicated in FIG. 7D, a film type photosensitive material 430is disposed on a second surface 410 b of the silicon substrate 410,wherein the photosensitive material 430 covers the ring hole 410 c.

As indicated in FIG. 7E, the film type photosensitive material 430 ismelted by way of low temperature baking (for example, 30˜50° C.) suchthat part of the melted photosensitive material 430 fills the ring hole410 c.

As indicated in FIG. 7F, the photosensitive material 430 is ripened byway of high temperature baking (for example, 80° C.).

As indicated in FIG. 7G, a mask 800 is provided. The mask 800 has a maskopening 800 a. The mask opening 800 a corresponds to the location of thesilicon pillar 410 d. Also, referring to FIG. 7G and FIG. 8, thediameter D1 of the mask opening 800 a is greater than or equal to thediameter D2 of the inner lateral wall 410 f but smaller than thediameter D3 of the outer lateral wall 410 g. To be more precisely, thediameter D1 of the mask opening 800 a satisfies the followingexpression:

D2≦D1<D3   (1)

In the present embodiment of the invention, the diameter D1 of the maskopening 800 a is exactly equal to the diameter D2 of the inner lateralwall 410 f.

Then, as indicated in FIG. 7H, the exposed photosensitive material 430is patterned, such that the photosensitive material 430 forms an opening430 a, wherein the size and the location of the opening 430 a aredetermined according to the size and the location of the mask opening800 a. As the mask opening 800 a of the present embodiment of theinvention corresponds to the silicon pillar 410 d and is equal to thediameter D2 of the inner lateral wall 410 f, the opening 430 a alsocorresponds to the silicon pillar 410 d and the diameter D4 of theopening 430 a is also equal to the diameter D2 of the inner lateral wall410 f.

As indicated in FIGS. 7H-7I, the photosensitive material 430 having theopening 430 a is used as a mask to etch the silicon pillar 410 d. As theopening 430 a corresponds to the silicon pillar 410 d and the diameterD4 of the opening 430 a is equal to the diameter D2 of the inner lateralwall 410 f, the silicon pillar 410 d can be completely removed.Meanwhile, referring to FIG. 7I and FIG. 9. FIG. 9 shows a perspectiveof a second surface 410 b of a silicon substrate 410 of FIG. 7I. Thesilicon substrate 410 forms a through hole 410 e passing through thefirst surface 410 a and the second surface 410 b, wherein one end of thethrough hole 110 e is sealed by the first conductive wiring 120 but theother end of the through hole 410 e is open.

Referring to FIG. 7J, a seed layer 431 is disposed on the photosensitivematerial 430 and the bottom surface of the through hole 410 e. Next,referring to FIG. 7K, a photosensensitive layer 432 having an opening432 a is disposed on the seed layer 431. After that, referring to FIG.7L, a conductive material 460 is filled in the through hole 410 e.Wherein, the bottom part of the conductive material 460 forms aconductive pillar 460 b, and the top part of the conductive material 460forms a second conductive wiring 460 a. Then, referring to FIG. 7M, thephotosensensitive layer 432 (shown in FIG. 7L) is removed. Afterwards,referring to FIG. 7N, part of the seed layer 431 is etched. Wherein thesecond conductive wiring 460 a can be used as a redistribution layer(RDL).

In the present embodiment of the invention, the conductive material 460is disposed in the through hole 410 e by way of electroplating a metal.Wherein the metal is selected form copper (Cu). After the through hole410 e is filled by the conductive material 460, the outer surface 460 cof the conductive material 460 is surrounded by the photosensitivematerial 430.

As indicated in FIG. 7O, a conductive bump 470 is implanted on theconductive material 460 to form a conductive point.

Lastly, referring to FIG. 7O, the semiconductor structure 400manufactured according to the present embodiment of the inventionincludes the silicon substrate 410, the photosensitive material 430, theconductive material 460, the first conductive wiring 420 and theconductive bump 470. The silicon substrate 410 has the through hole 410e whose two ends are respectively sealed by the first conductive wiring420 and the conductive bump 470. The conductive material 460 is disposedin the through hole 410 e. The photosensitive material 430 covers alateral wall 410 h of the through hole 410 e and the second surface 410b. Thus, the outer surface 460 c of the conductive material 460 and partof the second surface 410 b are completely covered by the photosensitivematerial 430.

Besides, another embodiment based on the concepts of FIG. 2 is alsoprovided. Referring to FIGS. 10A˜10C, further perspectives of a methodfor manufacturing a semiconductor structure according to a preferredembodiment of the invention are shown. Referring to FIG. 10A, a siliconsubstrate 910 having a through hole 910 e is provided. A firstconductive wiring 920 is disposed on the first surface 910 a and coversthe through hole 910 e. A photosensitive material 930 is cover a lateralwall 910 h of the through hole 910 e and a second surface 910 b.

As indicated in FIG. 10B, the solder paste 960 is disposed in thethrough hole 910 e. As indicated in FIG. 10C, the solder paste 960 isreflow to form a conductive pillar 970 b and a second conductive wiring970 a. Wherein the second conductive wiring 970 a can be used as aredistribution layer (RDL).

In addition, please refer to FIG. 11, a semiconductor package 1000 isshown. The semiconductor 1000 includes a package substrate 497 and asilicon interposer 498 and a chip 499. The silicon interposer 498 isexemplified as the semiconductor structure 400 of FIG. 7O.

The semiconductor structure and the method for manufacturing the samedisclosed in the above embodiments of the invention have many advantagesexemplified as follows:

Firstly, according to the manufacturing method disclosed above, thephotosensitive material used as an insulating layer is disposed in thethrough hole and on the second surface by simple procedures withoutemploying expensive CVD equipment, largely reducing manufacturing cost.

Secondly, according to the manufacturing method disclosed above, thereis no need to polish the silicon substrate, hence simplifyingmanufacturing process, avoiding the silicon substrate being damaged andincreasing product yield rate.

While the invention has been described by way of example and in terms ofa preferred embodiment, it is to be understood that the invention is notlimited thereto. On the contrary, it is intended to cover variousmodifications and similar arrangements and procedures and the scope ofthe appended claims therefore should be accorded the broadestinterpretation so as to encompass all such modifications and similararrangements and procedures.

1. A method for manufacturing a semiconductor structure, comprising:providing a silicon substrate; removing a part of the silicon substrateto form a ring hole and a silicon pillar surrounded by the ring hole;disposing a photosensitive material in the ring hole, wherein thephotosensitive material is insulating; removing the silicon pillar, suchthat the ring hole forms a through hole and the photosensitive materialcovers a lateral wall of the through hole; and disposing a conductivematerial in the through hole, wherein the conductive material issurrounded by the photosensitive material.
 2. The manufacturing methodaccording to claim 1, wherein the part of the silicon substrate isremoved by etching.
 3. The manufacturing method according to claim 1,wherein before the step of forming the ring hole, the manufacturingmethod further comprises: forming a first conductive wiring on a firstsurface of the silicon substrate, wherein the first conductive wiring isdisposed at a pre-determined position corresponding the ring hole. 4.The manufacturing method according to claim 3, wherein the step ofdisposing the photosensitive material in the ring hole comprises:disposing the photosensitive material on a second surface of the siliconsubstrate, wherein the photosensitive material covers the ring hole;melting the photosensitive material, such that part of the meltedphotosensitive material fills in the ring hole; and ripening thephotosensitive material which has been melted and filled in the ringhole.
 5. The manufacturing method according to claim 1, wherein the stepof removing the silicon pillar comprises: patterning the photosensitivematerial, such that the photosensitive material forms an openingcorresponding to the silicon pillar; and using the patternedphotosensitive material as a mask and etching the silicon pillar toremove the silicon pillar.
 6. The manufacturing method according toclaim 5, wherein the ring hole has an inner lateral wall and an outerlateral wall and in the step of patterning the photosensitive material,and the diameter of the opening is greater than or equal to the diameterof the inner lateral wall but smaller than the diameter of the outerlateral wall.
 7. The manufacturing method according to claim 1, whereinthe step of disposing the conductive material in the through holecomprises: electroplating a metal in the through hole.
 8. Themanufacturing method according to claim 1, wherein the step of disposingthe conductive material in the through hole comprises: filling a solderpaste in the through hole; and reflowing the solder paste.
 9. Themanufacturing method according to claim 1, further comprising: forming asecond conductive wiring on a second surface of the silicon substrate,the second conductive wiring electrically connects the conductivematerial in the through hole.
 10. The manufacturing method according toclaim 9, further comprising: forming a bump on the second conductivewiring.
 11. A semiconductor structure, comprising: a silicon substratehaving a through hole; a photosensitive material disposed on a lateralwall of the through hole, wherein the photosensitive material isinsulating; and a conductive material disposed in the through hole andan outer surface of the conductive material is surrounded by thephotosensitive material.
 12. The semiconductor structure according toclaim 11, further comprising: a first conductive wiring formed on afirst surface of the silicon substrate, wherein the first conductivewiring connects one end of the through hole; and a conductive bumpdisposed on a second surface of the silicon substrate, wherein theconductive bump connects the other end of the through hole; wherein thefirst conductive wiring, the conductive material and the conductive bumpare electrically connected.
 13. The semiconductor structure according toclaim 11, further comprising: a second conductive wiring formed on thesecond surface of the silicon substrate; wherein the conductive bump isdisposed on the second conductive wiring.
 14. The semiconductorstructure according to claim 11, wherein the outer surface of theconductive material is completely covered by the photosensitivematerial.
 15. The semiconductor structure according to claim 11, whereinthe photosensitive material is further disposed on a second surface ofthe silicon substrate.
 16. The semiconductor structure according toclaim 11, wherein the thickness of the photosensitive material is 3-10μm.
 17. A semiconductor package, comprising: a package substrate; asilicon interposer disposed above the package substrate, comprising: asilicon substrate having a through hole; a photosensitive materialdisposed on a lateral wall of the through hole, wherein thephotosensitive material is insulating; and a conductive materialdisposed in the through hole and an outer surface of the conductivematerial is surrounded by the photosensitive material; and a chipdisposed above the silicon interposer.
 18. The semiconductor packageaccording to claim 17, wherein the silicon interposer further comprises:a first conductive wiring formed on a first surface of the siliconsubstrate, wherein the first conductive wiring connects one end of thethrough hole; and a conductive bump disposed on a second surface of thesilicon substrate, wherein the conductive bump connects the other end ofthe through hole; wherein the first conductive wiring, the conductivematerial and the conductive bump are electrically connected.
 19. Thesemiconductor package according to claim 17, wherein the siliconinterposer further comprises: a second conductive wiring formed on thesecond surface of the silicon substrate; wherein the conductive bump isdisposed on the second conductive wiring.
 20. The semiconductor packageaccording to claim 17, wherein the outer surface of the conductivematerial is completely covered by the photosensitive material.
 21. Thesemiconductor package according to claim 17, wherein the photosensitivematerial is further disposed on a second surface of the siliconsubstrate.
 22. The semiconductor package according to claim 17, whereinthe thickness of the photosensitive material is 3-10 μm.